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MGSF1N02L, MVGSF1N02L
ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
(V GS = 0 Vdc, I D = 10 m Adc)
Zero Gate Voltage Drain Current
(V DS = 20 Vdc, V GS = 0 Vdc)
(V DS = 20 Vdc, V GS = 0 Vdc, T J = 125 ° C)
Gate ? Body Leakage Current (V GS = ± 20 Vdc, V DS = 0 Vdc)
V (BR)DSS
I DSS
I GSS
20
?
?
?
?
?
?
?
?
1.0
10
± 100
Vdc
m Adc
nAdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(V DS = V GS , I D = 250 m Adc)
Static Drain ? to ? Source On ? Resistance
(V GS = 10 Vdc, I D = 1.2 Adc)
(V GS = 4.5 Vdc, I D = 1.0 Adc)
V GS(th)
r DS(on)
1.0
?
?
1.7
0.075
0.115
2.4
0.090
0.130
Vdc
W
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(V DS = 5.0 Vdc)
(V DS = 5.0 Vdc)
(V DG = 5.0 Vdc)
C iss
C oss
C rss
?
?
?
125
120
45
?
?
?
pF
SWITCHING CHARACTERISTICS (Note 2)
Turn ? On Delay Time
t d(on)
?
2.5
?
ns
Rise Time
Turn ? Off Delay Time
Fall Time
(V DD = 15 Vdc, I D = 1.0 Adc,
R L = 50 W )
t r
t d(off)
t f
?
?
?
1.0
16
8.0
?
?
?
Gate Charge (See Figure 6)
Q T
?
6000
?
pC
SOURCE ? DRAIN DIODE CHARACTERISTICS
Continuous Current
Pulsed Current
Forward Voltage (Note 2)
I S
I SM
V SD
?
?
?
?
?
0.8
0.6
0.75
?
A
?
V
1. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
TYPICAL ELECTRICAL CHARACTERISTICS
2.5
3
2
1.5
V DS = 10 V
- 55 ° C
2.5
2
4V
3.5 V
3.25 V
V GS = 3.0 V
1.5
1
T J = 150 ° C
1
2.75 V
0.5
25 ° C
0.5
2.5 V
2.25 V
0
1
1.5 2 2.5 3
3.5
0
0
1
2
3
4
5
6
7
8
9
10
V GS , GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. Transfer Characteristics
http://onsemi.com
2
V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. On ? Region Characteristics
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